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Parasitic BJT Read Method for High-Performance Capacitorless 1T-DRAM Mode in Unified RAM

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4 Author(s)
Jin-Woo Han ; Div. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea ; Moon, Dong-Il ; Dong-Hyun Kim ; Choi, Yang-Kyu

A high-performance unified RAM without soft programming is demonstrated on a fully depleted FinFET structure. An oxide/nitride/oxide gate dielectric is integrated in a floating-body FinFET, thereby providing the versatile functions of nonvolatile Flash memory and high-speed capacitorless 1T-DRAM. A new read method involving the utilization of a parasitic bipolar junction transistor is employed for the capacitorless 1T-DRAM mode. This manner provides nondestructive reading and a high sensing current window (DeltaIS > 45 muA). As the nitride traps are filled with holes before activating the capacitorless 1T-DRAM mode, an undesirable contribution of hole trapping on a threshold voltage shift, i.e., soft programming, is inhibited without sacrificing the sensing current window.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 10 )