By Topic

Channel doping engineering of MOSFET with adaptable threshold voltage using body effect for low voltage and low power applications

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Wann, H.C. ; Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA ; Chenming Hu ; Noda, K. ; Sinitsky, D.
more authors

With the scaling of the power supply voltage VDD in low voltage and low power VLSI, the threshold voltage of the MOSFET device needs to be reduced to retain the device performance in terms of current driving capability and switching speed. Recently MOSFET devices whose threshold voltages can be adapted during the transistor operation using the body effect have been proposed for low voltage and low power VLSI applications. In these devices, the threshold voltages are reduced by forward-biasing the body-to-source junction. In this paper we study the effect of the channel doping engineering on this threshold voltage reduction scheme

Published in:

VLSI Technology, Systems, and Applications, 1995. Proceedings of Technical Papers. 1995 International Symposium on

Date of Conference:

31 May-2 Jun 1995