By Topic

Accelerated aging and long-term reliability study of ion-implanted GaAs MMIC IF amplifier

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Esfandiari, R. ; TRW, Redondo Beach, CA, USA ; O'Neill, T.J. ; Lin, T.S. ; Kono, R.K.

The results of reliability testing of ion-implanted GaAs monolithic microwave integrated circuit (MMIC) IF amplifiers (IFA) fabricated on 3-in chromium-doped GaAs LEC substrates are presented. Three accelerated aging tests and one long-term life test performed on more than 200 IFAs and totaling 13000 h have been completed. The predicted failure rate is less than 150 FITs for an operating temperature of 125°C. The mean time to failure (MTTF) is 107 h with an activation energy of 1.9 eV. The principle failure modes are degradation of IFA bias current and RF gain. Preliminary failure analysis indicates that degradation results from an increase in FET channel resistance and reduced transconductance

Published in:

Electron Devices, IEEE Transactions on  (Volume:37 ,  Issue: 4 )