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Infrared observation of gate turn-off thyristor segment parameter nonuniformity

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2 Author(s)
M. Hatle ; Dept. of Microelectron., Czechoslovak Tech. Univ. of Prague, Czechoslovakia ; J. Vobecky

A detection system for measuring the spatial distribution of recombination radiation intensity was used to determine individual gate-turn-off (GTO) thyristor cathode segment parameter nonuniformity. The radiation intensity distribution of the segments is shown to correlate with their steady-state forward voltage drops. The method can significantly simplify and speed up the basic diagnosis of a high-power GTO under a state closely approximating actual operating conditions

Published in:

IEEE Transactions on Electron Devices  (Volume:37 ,  Issue: 4 )