Cart (Loading....) | Create Account
Close category search window
 

The preparation of single-crystal silicon for the production of voltage-reference diodes

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)

Silicon crystals with phosphorus concentrations up to 1.5×1019 atoms per cubic centimetre have been prepared by the Czochralski technique. The phosphorus was added either in the form of ammonium orthophosphate or by means of a silicon-phosphorus alloy containing approximately 1¿% phosphorus. It is shown that the use of such an alloy as the doping agent results in improved control of the phosphorus concentration compared with the results obtained with ammonium orthophosphate. Aluminium-wire-type alloyed diodes were prepared using silicon with phosphorus concentrations from 2×1016 to 1.5×1019 atoms per cubic centimetre. The breakdown voltage of these diodes was found to be dependent on the phosphorus concentration up to 3×1018 atoms per cubic centimetre. At concentrations greater than this, the breakdown voltage was found to be sensitive to the alloying conditions. The mechanism of the formation of the p-n junction in silicon with phosphorus concentrations greater than 3×1018 atoms per cubic centimetre is discussed.

Published in:

Proceedings of the IEE - Part B: Electronic and Communication Engineering  (Volume:106 ,  Issue: 15 )

Date of Publication:

May 1959

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.