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A charge-based model for short-channel MOS transistor capacitances

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2 Author(s)
R. Gharabagi ; Dept. of Electr. Eng., Pittsburgh Univ., PA, USA ; M. A. El-Nokali

A model that conserves charge, is valid in the strong inversion regime, and is based on the quasi-static approximation is presented. Major second-order effects such as carrier velocity saturation, mobility degradation, and channel-length modulation are included in the derivation of current and charges. The theoretical predictions of the model are compared to both experimental and numerically simulated data and are found to be in good agreement over a wide range of gate and drain voltages and to confirm many properties that have been observed or predicted

Published in:

IEEE Transactions on Electron Devices  (Volume:37 ,  Issue: 4 )