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Dry cleaning of Si and SiO2 surfaces using SiCl4 system

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6 Author(s)
Sugino, Rinji ; Fujitsu Labs. Ltd., Atsugi, Japan ; Okui, Y. ; Shigeno, M. ; Okubo, S.
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We have found an effective dry cleaning technique using SiCl4 as a cleaning gas. Now, for the first time, surface Fe contaminants can be removed from an SiO2 surface using SiCl 4. A Cl2+SiCl4 combination allows dry cleaning of a Si surface at a lower temperature than the conventional UV/Cl2 method. Use of this Cl2+SiCl4 mixture gave good surface flatness and surface constitution for both Si and SiO2 surfaces

Published in:

Semiconductor Manufacturing, 1995., IEEE/UCS/SEMI International Symposium on

Date of Conference:

17-19 Sep 1995