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Simulation of substrate hot-electron injection

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7 Author(s)
Pagaduan, F.E. ; Microelectron. Lab., Santa Clara Univ., CA, USA ; Yang, Cary Y. ; Toyabe, T. ; Nishioka, Y.
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Electron trapping in thin oxide and interface state generation has been investigated using a constant-current stressing technique. Assuming finite-temperature Fowler-Nordheim tunneling, semiempirical simulations of voltage versus stress time behavior were obtained for an MOS diode. A trapped charge model was used to simulate voltage versus stress-time behavior. The comparison between measurement and simulation results yields information about trapped charges in the oxide and at the oxide-substrate interface. The model can serve as the basis for improved understanding of the more complex phenomenon of channel hot-carrier injection in MOS transistors

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Electron Devices, IEEE Transactions on  (Volume:37 ,  Issue: 4 )