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Comparison of SiO2, Si3N4, As2S3, and Ge0.25Se0.75 dielectric layers for InP- and GaAs-based material systems for midinfrared quantum cascade laser waveguides

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5 Author(s)
Rehouma, G. ; Institute of Microwaves and Photonics, School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom ; Evans, C.A. ; Ikonic, Z. ; Indjin, D.
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We present in this paper a direct comparison of the optical properties of InP- and GaAs-based quantum cascade laser waveguides operating in the midinfrared wavelength range. The absorption loss and optical confinement were calculated using a two-dimensional electromagnetic finite-element method. The effect on the waveguide properties of SiO2, Si3N4, As2S3, and Ge0.25Se0.75 used as electrical insulation layers is investigated. The results indicate that a careful choice of this particular layer according to the geometrical structure and the emission wavelength should enhance the laser performance.

Published in:

Journal of Applied Physics  (Volume:106 ,  Issue: 5 )