By Topic

A low-voltage, bulk-driven MOSFET current mirror for CMOS technology

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
B. J. Blalock ; Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA ; P. E. Allen

A bulk-driven, MOSFET current mirror is described which is capable of operating at power supplies down to 1 V using standard CMOS technologies with threshold voltages in the range of ±0.8 V. The bulk-driven MOSFET configuration removes the requirement that the input voltage of the current mirror equal VGS>VT. At VDD/VSS of+0.75 V/-0.75 V, measurements on simple current mirrors using this new technique require only about 0.1 V across the input device of the current mirror circuit and exhibit saturation voltages on the output device of the current mirror comparable to that of standard simple current mirrors. The operation and first-order models for the bulk-driven MOSFET are presented in this paper along with the operation and experimental results of a simple, bulk-driven mirror

Published in:

Circuits and Systems, 1995. ISCAS '95., 1995 IEEE International Symposium on  (Volume:3 )

Date of Conference:

30 Apr-3 May 1995