Micropower class AB CMOS current conveyor based on quasi-floating gate techniques

A novel class AB second-generation CMOS current conveyor (CCII) is presented. Class AB operation is achieved without increasing supply voltage requirements or power consumption. The circuit also features very low input resistance at terminal X. The CCII has been fabricated in a 0.5-mum CMOS technology. Measurement results using a dual supply voltage of plusmn1.65 V show a THD of -60 dB at 120 kHz in current follower configuration, for input and output currents 20 times larger than the bias current. The quiescent power of this configuration is 99 muW and the silicon area is 0.02 mm
²
.