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The feasibility of using standard 0.18mum CMOS technology for low cost wideband monolithic microwave integrated circuits (MMICs) at ~27GHz is demonstrated. Three monolithically integrated distributed voltage controlled oscillators (DVCOs) with a novel gain cell comprising of n-FET common source with p-FET current-source load are designed. Two of the DVCO's have 3 stages of the gain cell while the third has 4 stages. Top Layer metal is used a coplanar waveguide for producing on-chip inductive elements. An important feature of these DVCOs is the use of body bias variation for very large frequency tuning. Simulation results indicate that the 4-stage DVCO achieves a tuning range of 22.43-23.42 GHz i.e 990 MHz whereas the 3-stage DVCO has a tuning range of 25.82-27.10 GHz i.e 1.28 GHz, with respectively ~0.5 dBm and ~1 dBm change in output power over tuning range for DVCOs. The best value of phase noise for 3-stage DVCO is obtained by applying reverse body bias on n-FETs. For a reverse body bias voltage of -1V, the phase noise is -97.39 dBc/Hz at 1 MHz offset from 26.87 GHz.