By Topic

ZnO-Based Fairly Pure Ultraviolet Light-Emitting Diodes With a Low Operation Voltage

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Huang, Huihui ; Dept. of Electron. Sci. & Technol., Wuhan Univ., Wuhan, China ; Fang, Guojia ; Mo, Xiaoming ; Long, Hao
more authors

A ZnO-based metal-insulator (HfO2) -semiconductor diode was synthesized on a commercially available n+-GaN/sapphire substrate using a radio-frequency magnetron sputtering system. Electroluminescence measurements revealed that the diode exhibited fairly pure ultraviolet (UV) emission peaking at ~ 370 nm with a line width of less than 8 nm. By choosing a proper thickness of the insulator HfO2 layer, the threshold voltage of the emission could be reduced to 2 V, demonstrating that this ZnO-based fairly pure UV light-emitting diode can be driven by two ordinary dry batteries. The reason for low threshold voltage is proposed in terms of the n+-GaN/sapphire substrate and the high-k insulator HfO2 layer.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 10 )