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Blue-Enhanced PIN Finger Photodiodes in a 0.35- \mu{\hbox {m}} SiGe BiCMOS Technology

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6 Author(s)
Zimmermann, H. ; Inst. of Electrodynamics, Microwave & Circuit Eng., Vienna Univ. of Technol., Vienna, Austria ; Marchlewski, A. ; Gaberl, W. ; Jonak-Auer, I.
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Finger photodiodes in PIN technology are introduced to enhance the responsivity for blue and ultraviolet light. A thick low doped epitaxial layer results in high responsivity and high bandwidth also for red and near-infrared light. Results of PIN finger photodiodes are compared to that of PIN photodiodes for 10- and 15-mum epitaxial intrinsic layer thickness. The cathode finger structure results in a high responsivity of 0.20 A/W (quantum efficiency 61%) for 410-nm light and a bandwidth of 1.25 GHz for 10- mum epi thickness at a reverse bias voltage of 3 V. The rise and fall times with an epitaxial layer thickness of 15 mum are below 1 ns for the wavelength range from 410 to 785 nm.

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Photonics Technology Letters, IEEE  (Volume:21 ,  Issue: 22 )