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Ultrathin InAlN/AlN Barrier HEMT With High Performance in Normally Off Operation

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15 Author(s)
Ostermaier, C. ; Vienna Univ. of Technol., Vienna, Austria ; Pozzovivo, G. ; Carlin, Jean-Francois ; Basnar, B.
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We present GaN-based high electron mobility transistors (HEMTs) with a 2-nm-thin InAlN/AlN barrier capped with highly doped n++ GaN. Selective etching of the cap layer results in a well-controllable ultrathin barrier enhancement-mode device with a threshold voltage of +0.7 V. The n++ GaN layer provides a 290-Omega/square sheet resistance in the HEMT access region and eliminates current dispersion measured by pulsed IV without requiring additional surface passivation. Devices with a gate length of 0.5-mum exhibit maximum drain current of 800 mA/mm, maximum transconductance of 400 mS/mm, and current cutoff frequency fT of 33.7 GHz. In addition, we demonstrate depletion-mode devices on the same wafer, opening up perspectives for reproducible high-performance InAlN-based digital integrated circuits.

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Electron Device Letters, IEEE  (Volume:30 ,  Issue: 10 )