By Topic

Ultralow-Voltage Bilayer Graphene Tunnel FET

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Gianluca Fiori ; Dipt. di Ing. dell'Inf.: Elettron., Inf., Telecomun., Univ. di Pisa, Pisa, Italy ; Giuseppe Iannaccone

In this letter, we propose the bilayer graphene tunnel field-effect transistor (TFET) as a device suitable for fabrication and circuit integration with present-day technology. It provides high I on/I off ratio at ultralow supply voltage, without the limitations in terms of prohibitive lithography and patterning requirements for circuit integration of graphene nanoribbons. Our investigation is based on the solution of the coupled Poisson and Schrodinger equations in three dimensions, within the non-equilibrium Green's function formalism on a tight binding Hamiltonian. We show that the small achievable gap of only few hundreds of millielectronvolts is still enough for promising TFET operation, providing a large I on/I off ratio in excess of 103 even for a supply voltage of only 0.1 V. A key to this performance is the low quantum capacitance of bilayer graphene, which permits to obtain an extremely small subthreshold swing S smaller than 20 mV/dec at room temperature.

Published in:

IEEE Electron Device Letters  (Volume:30 ,  Issue: 10 )