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Gate tunable photoconductivity of p-channel Se nanowire field effect transistors

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5 Author(s)
Liao, Zhi-Min ; Department of Physics, State Key Laboratory for Mesoscopic Physics, Peking University, Beijing 100871, People’s Republic of China ; Hou, Chong ; Zhao, Qing ; Liu, Li-Ping
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We have investigated the photoelectrical properties of p-type selenium nanowire field effect transistors. The hole concentrations are estimated to be 4.1×1017 and 2.5×1018 cm-3 for the device under dark and illumination, respectively. The photoelectrical on/off ratio can be tunable from 4 to 160 as the gate voltage decreases from 20 to -20 V.

Published in:

Applied Physics Letters  (Volume:95 ,  Issue: 9 )