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Photoluminescence enhancement by rapid thermal annealing for ZnO epitaxial films grown on Si (100) by pulsed laser deposition

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6 Author(s)
He, Q. ; Faculty of Physics and Electronic Technology, Hubei University, Wuhan 430062, People’s Republic China ; Wang, X.N. ; Wang, H.B. ; Zhu, J.H.
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ZnO single-crystalline films were prepared by predepositing a homobuffer layer on Si (100) substrate in a pulsed laser deposition system. The effect of short-time rapid thermal annealing under N2 and O2 ambient on the optical property was systematically studied by photoluminescence measurements from 77 K to room temperature. Different from the adverse effect of the O2-assisted rapid thermal annealing on the optical quality, N2-assisted rapid thermal annealing can greatly enhance the ultraviolet emission while eliminate the deep-level emission band including separate green, yellow, and orange luminescence peaks. Such ambient-dependent photoluminescence enhancement was attributed to the elimination of oxygen interstitial in the ZnO film.

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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:27 ,  Issue: 5 )