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Selenium Segregation for Lowering the Contact Resistance in Ultrathin-Body MOSFETs With Fully Metallized Source/Drain

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4 Author(s)
Hoong-Shing Wong ; Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore ; Lap Chan ; Samudra, G. ; Yee-Chia Yeo

We report the first integration of selenium (Se) segregation contact technology in ultrathin-body (UTB) n-MOSFET featuring Ni fully silicided source and drain. During the Ni silicidation process, the implanted Se segregated at the NiSi-n-Si interface, leading to significant reduction of Schottky barrier height and contact resistance. The UTB n-MOSFETs integrated with Se segregation (SeS) contact technology show significant external series resistance reduction and drive current performance enhancement. Drain-induced barrier lowering and gate leakage current density are not adversely affected by the SeS process.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 10 )