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A novel methodology to analyze time-dependent dielectric breakdown failure mechanism of copper/low-k interconnects

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7 Author(s)
Tong, Y. ; Chartered Semicond. Manuf. Ltd., Singapore, Singapore ; Lim, Y.K. ; Chen, C.Q. ; Zhang, W.Y.
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A novel industry methodology has been developed to analyze TDDB reliability failure on Cu/low-k SiCOH interconnects. Initial breakdown point is at interface between capping layer and metal line. Inline process control needs to be tightened to improve end of line profile and electric field variation.

Published in:

Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the

Date of Conference:

6-10 July 2009

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