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Reliability analysis of ESD for novel image sensor with CMOS readout circuit

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6 Author(s)

Ye, Y. ; Key Lab. of the Minist. of Educ. Polarization Mater. & Devices, East China Normal Univ., Shanghai, China ; Han, J. ; Li, J. ; Zhan, G.
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According to the characterization of a new image sensor with quantum dots-quantum well (QDs-QW) hybrid hetero-structure, several electrostatic discharge (ESD) protection approaches for readout integrated circuits (ROIC) applied to novel image sensor with state-of-the-art CMOS technology were carefully designed. The results were presented and analyzed in this paper.

Published in:
Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the

Date of Conference: 6-10 July 2009

Page(s):: 434 - 437
ISSN :: 1946-1542
E-ISBN :: 978-1-4244-3912-6
Print ISBN:: 978-1-4244-3911-9
INSPEC Accession Number:: 10866725

Conference Location :: Suzhou, Jiangsu
Digital Object Identifier :: 10.1109/IPFA.2009.5232613
Product Type:: Conference Publications

Author(s)

Ye, Y.
Key Lab. of the Minist. of Educ. Polarization Mater. & Devices, East China Normal Univ., Shanghai, China
Han, J. ; Li, J. ; Zhan, G. ; Zhu, R. ; Guo, F.

INSPEC: CONTROLLED INDEXING

CMOS image sensors

electrostatic discharge

integrated circuit design

integrated circuit reliability

readout electronics

semiconductor quantum dots

semiconductor quantum wells

INSPEC: NON CONTROLLED INDEXING

CMOS readout circuit

ESD protection approach

electrostatic discharge

image sensor

integrated circuit design

quantum dots-quantum well hybrid hetero-structure

readout integrated circuits

reliability analysis

state-of-the-art CMOS technology

IEEE TERMS

CMOS image sensors

CMOS integrated circuits

CMOS technology

Electrostatic discharge

Hybrid integrated circuits

Image analysis

Image sensors

Integrated circuit reliability

Protection

Quantum dots

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