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Thermal conductivity studies of a GaN-sapphire structure by combined scanning thermal microscopy and electron backscatter diffraction

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8 Author(s)
Zhang, Y.F. ; Inst. of Microstructure & Property of Adv. Mater., Beijing Univ. of Technol., Beijing, China ; Wang, L. ; Ji, Y. ; Han, X.D.
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Scanning thermal microscope (SThM) and electron backscatter diffraction (EBSD) techniques were used to investigate the local thermal-conductivity of a GaN-buffer-sapphire heterostructure. Compared with GaN epilayer, buffer layer displayed the low thermal-conductivity and the high strain state due to the lattice distortion.

Published in:

Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the

Date of Conference:

6-10 July 2009