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Thermal conductivity studies of a GaN-sapphire structure by combined scanning thermal microscopy and electron backscatter diffraction

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8 Author(s)
Y. F. Zhang ; Institute of Microstructure and Property of Advanced Materials, Beijing University of Technology, 100124, China ; L. Wang ; Y. Ji ; X. D. Han
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Scanning thermal microscope (SThM) and electron backscatter diffraction (EBSD) techniques were used to investigate the local thermal-conductivity of a GaN-buffer-sapphire heterostructure. Compared with GaN epilayer, buffer layer displayed the low thermal-conductivity and the high strain state due to the lattice distortion.

Published in:

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits

Date of Conference:

6-10 July 2009