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Different degradation behaviors of n-type poly-Si thin film transistors under dynamic voltage stresses have been demonstrated. Combined self-heating (SH) and hot-carrier (HC) degradation is first observed under a certain dynamic stress, where the device degradation is dependent on the pulse rising time (tr) but independent of the falling time (tf). Absence of the degradation during tf is attributed to the SH suppression of the HC mechanism. Typical HC degradation under pure Vg pulses is dependent on tf but in dependent of tr. While in the channel saturation mode, AC HC effect is dependent on both tr and tf. For the low frequency synchronized stresses, AC SH degradation behavior related to the pulse duty time is the same as DC SH.