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A three-terminal spin-torque-driven magnetic switch

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12 Author(s)
Sun, J.Z. ; IBM-MagIC MRAM Alliance, IBM T. J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598, USA ; Gaidis, M.C. ; OSullivan, E.J. ; Joseph, E.A.
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A three-terminal spin-torque-driven magnetic switch is experimentally demonstrated. The device uses nonlocal spin current and spin accumulation as the main mechanism for current-driven magnetic switching. It separates the current-induced write operation from that of a magnetic tunnel junction based read. The write current only passes through metallic structures, improving device reliability. The device structure makes efficient use of lithography capabilities, important for robust process integration.

Published in:

Applied Physics Letters  (Volume:95 ,  Issue: 8 )