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Size-induced metal-to-semiconductor transition and room temperature sequential resonant tunneling in La0.5Sr0.5CoO3-δ quantum dots embedded in La0.5Sr0.5CoO3-δ nanotubes

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6 Author(s)
Liu, Wei ; Department of Physics, Key Laboratory of Acoustic and Photonic Materials and Devices of Ministry of Education, and Center of Nanoscience and Nanotechnology, Wuhan University, Wuhan 430072, People’s Republic of China ; Chen, Yu ; Quan, Zuci ; Guo, Shishang
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The sequential resonant tunneling in La0.5Sr0.5CoO3-δ (LSCO) semiconductor quantum dots (QDs) arrays were observed by current-voltage measurements under room temperature. A series of spikelike current peaks are found, which are resulted from the accumulation and depletion of electrons tunneling through the QDs embedded in insulated barriers. Temperature dependent onset-voltage blueshift and number variation in current peaks are also observed. These results confirm the size-induced metal-to-semiconductor transition in LSCO.

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Applied Physics Letters  (Volume:95 ,  Issue: 8 )