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Electrical and photoelectrical properties of MIS structures with rare earth oxide films as insulator

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3 Author(s)
V. A. Rozhkov ; Dept. of Phys., Samara State Univ., Russia ; V. P. Goncharov ; A. Yu. Trusova

This paper is devoted to electrical and photoelectrical properties of silicon MIS structures with REO insulator such as yttrium, lutetium and samarium oxide films. Interface properties and barrier energies of metal-REO and silicon-REO interfaces are the subject of these investigations

Published in:

Conduction and Breakdown in Solid Dielectrics, 1995. ICSD'95., Proceedings of the 1995 IEEE 5th International Conference on

Date of Conference:

10-13 Jul 1995