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A 12-Channel Parallel 40Gb/s 0.35μm SiGe BiCMOS Laser Diode Driver

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3 Author(s)
Feng Xie ; Inst. of RF & OE-ICs, Southeast Univ., Nanjing, China ; Zhiqun Li ; Zhigong Wang

This paper presents a 12-channel parallel 40 Gb/s laser diode driver (LDD) realized in 0.35 mum SiGe BiCMOS technology. The single channel works at bite rate of 3.318 Gb/s. A "cross couple" capacitance cancel technique is used to increase bandwidth. To avoid substrate coupling noise brought by the adjacent channel, an isolation method for parallel amplifier is used. The measured results show the LDD can supply 5-20 mA modulation current and 2-5 mA bias current.

Published in:

Photonics and Optoelectronics, 2009. SOPO 2009. Symposium on

Date of Conference:

14-16 Aug. 2009