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Photoluminescence of La-O+-Codoped Silicon-Based Thin-Film Materials

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4 Author(s)
Yuan Meiling ; Dept. of Phys., Nanchang Univ., Nanchang, China ; Leng Xinli ; Li Chenfa ; Wang Qingnian

The photoluminescence (PL) spectra at room temperature for the silicon-based samples doped by La % O+ by ion double implantation are measured. The results show that all the samples possess blue-violet photoluminescence properties under the ultraviolet light excitation and its light emission is stable. The intensity of PL spectra is closely relative to different ion implanting sequence of La and O+ and to the temperature of thermal annealing.

Published in:

Photonics and Optoelectronics, 2009. SOPO 2009. Symposium on

Date of Conference:

14-16 Aug. 2009