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Silicon Carbide Thin Film Deposited at Low Temperature by DC Magnetron Sputtering and Its Field Emission Property

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3 Author(s)
Yanjun Wei ; Coll. of Electr. Eng., Yanshan Univ., Qinhuangdao, China ; Hanhong Qi ; Weiyang Wu

The SiC thin Alms were successfully fabricated on P-type <100> oriented silicon substrates at comparatively low temperature via DC magnetron sputtering deposition using a sintered SiC target with DC power of 120 W. The deposition argon pressure was constantly at 2.0 Pa. The as-grown SiC films were characterized by using X-ray diffraction, atomic force microscope (AFM) and profilometer. The low turn-on field of about 4.5 V/mum obtained from the field-emission property measurement at an anode-sample separation of 200 mum shows that SiC films are competitive candidates for field-emission-based vacuum microelectronic devices.

Published in:

Photonics and Optoelectronics, 2009. SOPO 2009. Symposium on

Date of Conference:

14-16 Aug. 2009