By Topic

Silicon Carbide Thin Film Deposited at Low Temperature by DC Magnetron Sputtering and Its Field Emission Property

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Yanjun Wei ; Coll. of Electr. Eng., Yanshan Univ., Qinhuangdao, China ; Hanhong Qi ; Weiyang Wu

The SiC thin Alms were successfully fabricated on P-type <100> oriented silicon substrates at comparatively low temperature via DC magnetron sputtering deposition using a sintered SiC target with DC power of 120 W. The deposition argon pressure was constantly at 2.0 Pa. The as-grown SiC films were characterized by using X-ray diffraction, atomic force microscope (AFM) and profilometer. The low turn-on field of about 4.5 V/mum obtained from the field-emission property measurement at an anode-sample separation of 200 mum shows that SiC films are competitive candidates for field-emission-based vacuum microelectronic devices.

Published in:

Photonics and Optoelectronics, 2009. SOPO 2009. Symposium on

Date of Conference:

14-16 Aug. 2009