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A Computational Study of Dopant-Segregated Schottky Barrier MOSFETs

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7 Author(s)
Lang Zeng ; Inst. of Microelectron., Peking Univ., Beijing, China ; Xiao Yan Liu ; Yu Ning Zhao ; Yu Hui He
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A dopant-segregated Schottky barrier MOSFET is simulated by Monte Carlo method in this paper. The feature that dopant-segregated structure can improve on-current is revealed. The influence of dopant-segregated structure parameters on device performance is investigated, and the guideline for device design optimization is that the dopant-segregated region should overlay the whole Schottky barrier region. Some carrier transport details are also demonstrated here. The maximal velocities at source and drain sides all decrease with the increase of dopant-segregated region length. The maximal velocity at source side shows saturation with the existence of dopant-segregated structure when drain voltage increases while the maximal velocity at drain side shows no saturation.

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Nanotechnology, IEEE Transactions on  (Volume:9 ,  Issue: 1 )