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Browse Journals & Magazines > Applied Physics Letters ...> Volume:95 Issue:8 Help

Self-cleaning and surface recovery with arsine pretreatment in ex situ atomic-layer-deposition of Al2O3 on GaAs

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4 Author(s)
Cheng, Cheng-Wei ; Department of Materials Science and Engineering, MIT, Cambridge, Massachusetts 02139, USA ; Hennessy, John ; Antoniadis, D. ; Fitzgerald, E.A.

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Annealing native oxide covered GaAs samples in Arsine(AsH3) prior to atomic-layer-deposition of Al2O3 with trimethyaluminum (TMA) and isopropanol (IPA) results in capacitance-voltage (C-V) characteristics of the treated samples that resemble the superior C-V characteristics of p-type GaAs grown by an in situ metal-organic chemical vapor deposition process. Both TMA and IPA show self-cleaning effect on removing the native oxide in ex situ process, little evidence of a native oxide was observed with high resolution transmission electron microscopy at the Al2O3/GaAs interface. The discrepancy in the C-V characteristics was observed in in situ p- and n-type GaAs samples.

Published in:
Applied Physics Letters  (Volume:95 ,  Issue: 8 )

Date of Publication: Aug 2009

Page(s):
082106 - 082106-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.3213545
Product Type:
Journals & Magazines
Date of Current Version :
01 September 2009
Issue Date :
Aug 2009

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