The self-similar growth scaling of TiO2, SiO2, and Al2O3 vertical post-glancing-angle deposited films has been characterized. Films were deposited using three deposition systems and four different deposition conditions. For a given film, good agreement was found with a self-similar growth model w(h)=w0hp. For the materials studied here, p was found to increase with deposition angle, in contrast to some previous literature reports. Values of 0.017±0.005, 0.011±0.005, and 0.014±0.005 deg-1 were found for TiO2, SiO2, and Al2O3, respectively.