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Growth scaling of metal oxide columnar thin films deposited by glancing angle depositions

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5 Author(s)
Taschuk, M.T. ; Department of Electrical and Computer Engineering, University of Alberta, Edmonton, Alberta T6G 2V4, Canada ; Krause, K.M. ; Steele, J.J. ; Summers, M.A.
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The self-similar growth scaling of TiO2, SiO2, and Al2O3 vertical post-glancing-angle deposited films has been characterized. Films were deposited using three deposition systems and four different deposition conditions. For a given film, good agreement was found with a self-similar growth model w(h)=w0hp. For the materials studied here, p was found to increase with deposition angle, in contrast to some previous literature reports. Values of 0.017±0.005, 0.011±0.005, and 0.014±0.005 deg-1 were found for TiO2, SiO2, and Al2O3, respectively.

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:27 ,  Issue: 5 )