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Type-I double-quantum-well GaSb-based diode lasers operating at 3 mum with room-temperature continuous-wave output power above 300 mW and peak power-conversion efficiency near 8 were designed and fabricated. Laser heterostructure comprised quinary AlGaInAsSb alloy as barrier and waveguide material. Use of quinary alloy resulted in adequate hole confinement. The waveguide thickness was chosen to maximise modal differential gain. Continuous-wave threshold current density about 100 A/cm2 per quantum-well and slope efficiency of 100 mW/A were demonstrated at 17degC.