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The design and implementation of a fully on-chip wideband low-noise amplifier (LNA) using 0.25 m silicon-on-sapphire technology is reported. The LNA is optimised for minimum noise figure (NF). Measurement results indicate that the LNA achieves an NF from 0.29 to 1.09 dB over 1.1 GHz-band with a minimum gain of 13.6 dB at a 2.5 V power supply.
Date of Publication: August 27 2009