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0.13 \mu m SiGe BiCMOS Technology Fully Dedicated to mm-Wave Applications

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21 Author(s)
Avenier, G. ; STMicroelectronics, Crolles, France ; Diop, M. ; Chevalier, P. ; Troillard, G.
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This paper presents a complete 0.13 μm SiGe BiCMOS technology fully dedicated to millimeter-wave applications, including a high-speed (230/280 GHz fT/fMAX) and medium voltage SiGe HBT, thick-copper back-end designed for high performance transmission lines and inductors, 2 fF/μm2 high-linearity MIM capacitor and complementary double gate oxide MOS transistors. Details are given on HBT integration, reliability and models as well as on back-end devices models.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:44 ,  Issue: 9 )

Date of Publication:

Sept. 2009

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