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We present ultra-low-voltage circuit design techniques for a fractional-N RF synthesizer with two-point modulation which was realized in 90-nm CMOS using only regular VT devices.; the voltage controlled oscillator, phase-frequency detector and charge pump operate from a 0.5 V supply while the divider uses a 0.65 V supply. The frequency synthesizer achieves a phase noise better than -120 dBc/Hz at 3 MHz, while consuming 6 mW. A calibration technique to equalize the gain between the two modulation ports is introduced and enables phase/frequency modulation beyond the loop bandwidth of the phase-locked loop. Measurement results for 2-Mb/s GFSK modulation are presented.