Experimental Demonstration of Novel High-Voltage Epilayer RESURF GaN MOSFET

We report on the experimental demonstration of a novel n-channel GaN epilayer RESURF GaN MOSFET with good tradeoff between breakdown voltage and specific on-resistance for the first time. Device with 4-mum channel length and 16-mum RESURF length has breakdown voltage up to 730 V with specific on-resistance 34 mOmegamiddotcm
²
(V
_G
- V
_T
= 20 V), best reported to date.