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Experimental Demonstration of Novel High-Voltage Epilayer RESURF GaN MOSFET

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5 Author(s)
Weixiao Huang ; Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY, USA ; Chow, T.P. ; Niiyama, Y. ; Nomura, T.
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We report on the experimental demonstration of a novel n-channel GaN epilayer RESURF GaN MOSFET with good tradeoff between breakdown voltage and specific on-resistance for the first time. Device with 4-mum channel length and 16-mum RESURF length has breakdown voltage up to 730 V with specific on-resistance 34 mOmegamiddotcm2 (VG - VT = 20 V), best reported to date.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 10 )

Date of Publication:

Oct. 2009

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