By Topic

Pockels effect in short period silicon germanium superlattices

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Khurgin, J.B. ; Johns Hopkins Univ., Baltimore, MD, USA ; Pruessner, M.W. ; Stievater, T.H. ; Rabinovich, W.S.

We introduce a method for calculating Pockels coefficients in SiGe superlattices. We show that the Pockels effect in (Si)1(Ge)1 superlattices is half as strong as in GaAs. This opens a path to efficient CMOS-compatible modulators.

Published in:

Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on

Date of Conference:

2-4 June 2009