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13.2 nm table-top inspection microscope for extreme ultraviolet lithography mask defect characterization

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14 Author(s)
Brizuela, F. ; NSF ERC for Extreme Ultraviolet Sci. & Technol., Colorado State Univ., Fort Collins, CO, USA ; Yong Wang ; Brewer, C.A. ; Pedaci, F.
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We report on a reflection microscope that operates at 13.2-nm wavelength with a spatial resolution of 55 plusmn 3 nm. The microscope uses a table-top EUV laser to acquire images of photolithography masks in 20 seconds.

Published in:

Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on

Date of Conference:

2-4 June 2009