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Dielectric properties and low temperature relaxation studies of doped TGS single crystals

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3 Author(s)
Jin, B.M. ; Mater. Res. Lab., Pennsylvania State Univ., University Park, PA, USA ; Erdei, S. ; Bhalla, A.S.

Several kinds of dopants (alanine, LiVO3 and valine) doped TGS were grown from solution by slow cooling method. Temperature dependence dielectric spectra were measured to study the variation of transition temperature, Kmax and room temperature dielectric constant depending on the dopants. Furthermore, several pieces were selected to investigate the positional inhomogeneities of the same sample. D-E hysteresis loop measurements were done to check for the internal bias field (Eb). We could not get a high figure of merit (p/K) in valine doped TGS because of low temperature relaxation around -10°C, although it has three times higher pyroelectric coefficient than that of alanine at transition temperature (TC)

Published in:

Applications of Ferroelectrics, 1994.ISAF '94., Proceedings of the Ninth IEEE International Symposium on

Date of Conference:

7 Aug 1991