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Performance analysis of InP nanowire band-to-band tunneling field-effect transistors

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2 Author(s)
Khayer, M.A. ; Department of Electrical Engineering, University of California, Riverside, California 92521-0204, USA ; Lake, R.K.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3212892 

Understanding the effect of material choice and nanowire (NW) diameter on drive current and leakage current is critical for a NW band-to-band tunneling (BTBT) field-effect transistor (FET) in the cold carrier injection regime. This letter presents theoretical investigation on drive currents and leakage currents of prototypical InP NW BTBT FETs based on calculating the imaginary wave vector in the bandgap as a function of NW diameter. The tunneling current in InP NW BTBT FETs, which show potential for applications in high-speed, high-power electronic devices, is investigated as a function of NW diameter and electric field.

Published in:

Applied Physics Letters  (Volume:95 ,  Issue: 7 )

Date of Publication:

Aug 2009

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