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Study on the formation of dodecagonal pyramid on nitrogen polar GaN surface etched by hot H3PO4

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13 Author(s)
Qi, S.L. ; State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, People''s Republic of China ; Chen, Z.Z. ; Fang, H. ; Sun, Y.J.
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Hot phosphor acid (H3PO4) etching is presented to form a roughened surface with dodecagonal pyramids on laser lift-off N face GaN grown by metalorganic chemical vapor deposition. A detailed analysis of time evolution of surface morphology is described as a function of etching temperature. The activation energy of the H3PO4 etching process is 1.25 eV, indicating the process is reaction-limited scheme. And it is found that the oblique angle between the facets and the base plane increases as the temperature increases. Thermodynamics and kinetics related factors of the formation mechanism of the dodecagonal pyramid are also discussed. The light output power of a vertical injection light-emitting-diode (LED) with proper roughened surface shows about 2.5 fold increase compared with that of LED without roughened surface.

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Applied Physics Letters  (Volume:95 ,  Issue: 7 )