Referenced Items are not available for this document.
The properties of Pb(Zr,Ti)O3 (PZT) thin films grown by MOCVD using a variety of source materials were compared and discussed. In the growth of the PZT thin films, three different Pb precursors were used -Pb(C2H5)4, Pb(DPM)2 and (C2H5)3PbOCH2C(CH3 )3. Ti(O-i-C3H7)4 and Zr(O-t-C4H9)4 were also used as the Ti and Zr precursors. The oxidizing gases used were O2, NO2 , and O2 containing O3. When using three different Pb precursors, it was found that there was a difference in the growth temperature required to obtain perovskite PZT films. It seemed that differences in the electrical properties observed may be due to differences in the orientation, crystallinity, film composition and film thickness. When O2 containing O3 was used, an improvement in breakdown voltage was observed
Published in:
Applications of Ferroelectrics, 1994.ISAF '94., Proceedings of the Ninth IEEE International Symposium on
Date of Conference: 7 Aug 1991
- Page(s):
- 303 - 308
- Meeting Date :
- 07 Aug 1994-10 Aug 1994
- Print ISBN:
- 0-7803-1847-1
- INSPEC Accession Number:
- 5085406
- Conference Location :
- University Park, PA
- Digital Object Identifier :
- 10.1109/ISAF.1994.522364
- Product Type:
- Conference Publications
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