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Analytic Model for Undoped Symmetric Double-Gate MOSFETs With Small Gate-Oxide-Thickness Asymmetry

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4 Author(s)
Sheng Chang ; Inst. of Microelectron. & Inf. Technol., Wuhan Univ., Wuhan, China ; Gaofeng Wang ; Qijun Huang ; Hao Wang

In this paper, an analytic model for undoped symmetric double-gate MOSFETs with small gate-oxide-thickness asymmetry is presented by virtue of a perturbation approach. Various effects on the MOSFET performance caused by small asymmetric departure from the nominal gate oxide thickness due to process variations and uncertainties are studied. This analytic solution can be used in compact models for IC designs.

Published in:

Electron Devices, IEEE Transactions on  (Volume:56 ,  Issue: 10 )