By Topic

A 12-GHz High-Efficiency Tapered Traveling-Wave Power Amplifier With Novel Power Matched Cascode Gain Cells Using SiGe HBT Transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Sewiolo, B. ; Inst. for Electron. Eng., Univ. of Erlangen-Nuremberg, Erlangen, Germany ; Fischer, G. ; Weigel, R.

In this paper, we present the analysis, design, and implementation of an integrated power distributed amplifier (DA), fabricated in a low-cost 0.25-mum SiGe BiCMOS technology. The circuit consists of four novel inductively peaked cascode gain cells, which are capacitively coupled to the base line for power optimization and bandwidth enhancement. Due to the tapered collector line, no output termination resistor is required, which provides higher efficiency. Design tradeoffs for maximum bandwidth, gain, output power, and efficiency are discussed by means of analytical calculations and simulations. A gain of 11 dB with a gain flatness of plusmn1 dB has been measured over a frequency range from 1 to 12 GHz. 19.5-dBm output power is obtained at the 1-dB compression point (P1 dB) in the desired frequency range with an associated power-added efficiency of 22.1% and a maximum output third-order intercept point of 31.5 dBm. The power dissipation of the amplifier is 400 mW from a 5-V supply. On-chip biasing is implemented via low dropout voltage reference driven by a bandgap voltage source. To the authors' knowledge, this is the highest output power achieved by an HBT DA in SiGe technology in this frequency range. The chip size is 2.1 mm2. Good agreement between simulation and measurement were achieved.

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:57 ,  Issue: 10 )