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Preparation and properties of lanthanum modified PbTiO3 thin films by rf-magnetron sputtering

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5 Author(s)
Iijima, K. ; Central Res. Labs., Matsushita Electr. Ind. Co. Ltd., Kyoto, Japan ; Takeuchi, T. ; Nagao, N. ; Takayama, R.
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Highly c-axis oriented Pb1-xLaxTi1-x/4 O3 (PLT) thin films were prepared by rf-magnetron sputtering on (100)MgO and (100)Pt/MgO substrate. These films were characterized by X-ray and electron diffraction and electron microscope. Thin film growth manner and c-axis orientation mechanism were discussed, Dielectric measurement revealed the phase transition behavior of PLT thin films. PLT thin film of x=0.15 shows an extremely large pyroelectric coefficient of 9.5×10-8 C/cm2 K and low dielectric constant of 330

Published in:
Applications of Ferroelectrics, 1994.ISAF '94., Proceedings of the Ninth IEEE International Symposium on

Date of Conference: 7 Aug 1991

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