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Unpinning of Fermi level at InP Schottky diode interfaces produced by novel in situ electrochemical process

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4 Author(s)
Wu, N.-J. ; Dept. of Electr. Eng., Hokkaido Univ., Sapporo, Japan ; Hashizume, T. ; Hasegawa, H. ; Amemiya, Y.

The paper demonstrates that the pinning of the Fermi level can be removed at InP metal-semiconductor interfaces produced by the novel in situ electrochemical process. The process consists of anodic etching of InP and subsequent cathodic deposition of metal, both of which are done in situ in the same electrolyte. InP Schottky diodes with various metals (Ag, Sn, Cu, Co, Pd, Ni and Pt) have been formed by using different electrolytes based on chloric or sulfuric acid and containing barrier metal ions. The diodes exhibited nearly thermionic emission characteristics. SBH changed over a wide range from 0.35 eV to 0.86 eV. The Pt/InP diodes gave the highest SBH of 0.86eV which is the highest value ever reported for an intimate metal contact to InP

Published in:

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Date of Conference:

9-13 May 1995

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