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Fabrication of InP-based quantum-wires and its application to lasers

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4 Author(s)
S. Arai ; Res. Center for Quantum Effect Electron., Tokyo Inst. of Technol., Japan ; M. Tamura ; Ki-Chul Shin ; S. Tamura

Fabrication technologies of GaInAs(P)/InP long-wavelength lasers consisting of quantum-wire active region are investigated. A combination of an electron-beam (EB) lithography, a fine-pattern etching, and succeeding OMVPE regrowth became more or less reliable process, that was confirmed through a low threshold current room-temperature CW operation of strained quasi-quantum-wire lasers. Measurements of photoluminescence (PL) intensity dependence on etched wire width revealed a low-damage property of electron-cyclotron-resonance reactive-ion-beam-etching (ECR-RIBE) with Cl2 gas by applying negative acceleration voltage to the sample. An introduction of a surface cleaning process with H2 gas just after the Cl2 ECR-RIBE was found to be effective for further reduction of damage especially for the wire width from 10 to 40 nm

Published in:

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Date of Conference:

9-13 May 1995