Fabrication of InP-based quantum-wires and its application to lasers

Fabrication technologies of GaInAs(P)/InP long-wavelength lasers consisting of quantum-wire active region are investigated. A combination of an electron-beam (EB) lithography, a fine-pattern etching, and succeeding OMVPE regrowth became more or less reliable process, that was confirmed through a low threshold current room-temperature CW operation of strained quasi-quantum-wire lasers. Measurements of photoluminescence (PL) intensity dependence on etched wire width revealed a low-damage property of electron-cyclotron-resonance reactive-ion-beam-etching (ECR-RIBE) with Cl/sub 2/ gas by applying negative acceleration voltage to the sample. An introduction of a surface cleaning process with H/sub 2/ gas just after the Cl/sub 2/ ECR-RIBE was found to be effective for further reduction of damage especially for the wire width from 10 to 40 nm.