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Focused ion beam implantation-induced disordering in InGaAsP MQW heterostructures [studied by photoluminescence]

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6 Author(s)
Elenkrig, B.B. ; Dept. of Eng. Phys., McMaster Univ., Hamilton, Ont., Canada ; Yang, J. ; Cassidy, D.T. ; Bruce, D.M.
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Results of an investigation of the effects of focused ion beam (FIB) implantation-induced intermixing of an InGaAsP-based multiple quantum well (MQW) structure on the room temperature photoluminescence (PL) are presented. The technique of spatially, spectrally and polarization resolved PL was used to study the process of QWs intermixing by Si+, Be+ and B+. It was found that implantation in a narrow (about 100 nm) line leads to an enhancement of PL yield. A qualitative explanation for this enhancement is given in terms of spatial bandstructure bending due to a doping effect in a narrow region

Published in:
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Date of Conference: 9-13 May 1995

Page(s):
612 - 615
Meeting Date :
09 May 1995-13 May 1995
Print ISBN:
0-7803-2147-2
INSPEC Accession Number:
5170016
Conference Location :
Hokkaido
Digital Object Identifier :
10.1109/ICIPRM.1995.522218
Product Type:
Conference Publications

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